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Zenith-100

Far and Near – Up to one hour at 2000°C

Zenith-100

    .High Temperature RTP-CVD furnace up to 2000°C up to one hour.

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Detail Specification

Applications

  • Silicon Carbide implantation annealing
  • Graphene by high temperature SiC sublimation
  • CVD of graphene
  • High temperature annealing

 

Specifications

The Zenith-100 system can process samples up to 4-inch diameter at temperature up to 2000°C. It is specially developed to meet the requirements of universities research laboratories.

The system has a stainless steel water-cooled chamber. The cold wall chamber technology provides significant advantages: high process reproducibility, low memory effect, higher cooling rates.

The high temperature tungsten heaters provide enhanced temperature uniformity. The system is not compatible with oxidizing atmosphere and the installation of a turbo pump is mandatory.

Both pyrometer and thermocouple temperature measurement are standard features. The fast digital PID temperature controller provides high and stable temperature repeatability (± 1°C). The system assures accurate and repeatable thermal control across the temperature range.

The design process chamber provides easy loading and unloading of the substrates and the installation of the thermocouples.

 

Characteristics

  • Up to 2000°C
  • Heating rate: room temperature to 2000°C in 10 minutes
  • High vacuum
  • Vacuum, neutral gas and reducing process atmosphere

 

Optional features

  • Graphite and silicon carbide coated susceptors
  • Rough vacuum pump and turbo pump, turbo pump
  • Automatic pressure control with throttle valve

 

※※ Product brochure: https://www.annealsys.com/Annealsys-Zenith-100.pdf


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