MC200
MC200
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特性說明：
Annealsys MC200為一200mm反應腔壁具熱控制薄膜沉積製程系統，可廣泛應用於DLI-CVD and DLI-ALD製程。
Direct Liquid Injection (DLI)汽化器提供先驅物(precursors)良好的控制並可使用低壓與稀釋的化學先驅物。汽化先驅物可由旁通閥快速切換提供薄膜沉積物良好的控制。
可選用電容電漿以提供具PE-CVD與PE-ALD能力來降低薄膜沉積時溫度。
反應腔熱控制壁提供先驅物更有效地使用，並可限制薄膜沉積物於製程腔體壁上生成。自動液體流量控制板可自動調整先驅物的使用量而使之最佳化。無死角的容器設計提供化學品更快速地更換與填充。
詳細說明
規格表格：
|
Maximum substrate size |
200 mm |
|
Process chamber |
Stainless steel with thermally controlled walls Rotating substrate holder |
|
Heating |
Resistor heating up to 850°C |
|
Temperature control |
Thermocouple temperature control Digital PID temperature controllers |
|
Vacuum, gas and liquid |
Purge gas line with needle valve Up to 8 process gas lines with mass flow controllers Up to 4 vaporizer units selected function of liquid precursors Additional ALD kits Custom liquid panel depending on the application Vacuum valve and vacuum gauge Optional vacuum rotary of dry pump |
|
Control |
Full PC control |
|
Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 20 kW Water: 2 to 6 bars, pressure drop 1 bar, 10 l/mn Compressed air: 6 bars (valve actuation) Process gas fittings: VCR ¼ |
|
Dimensions and weight |
Width: 1405 mm Depth: 1504 mm Height: 2200 mm Weight: 1000 kg |
- Implant annealing
- Contact annealing (III-V and SiC)
- Rapid Thermal Oxidation (RTO)
- Rapid Thermal Nitridation (RTN)
- Selenization (CIGS solar cells)
- Silicon carbonization
- Sol-gel densification and crystallization
- Diffusion from spin-on dopants
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- hBN, MoS2, WS2, MoSe2, WSe2, Graphene
- SiC implant annealing
- CVD of graphene
- Graphene by high temperature SiC sublimation