MC100
MC100
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特性說明：
Annealsys MC100為一100mm DLI-CVD and DLI-ALD薄膜沉積製程系統提供材料研究開發多方面應用。
Direct Liquid Injection (DLI)汽化器提供先驅物(precursors)良好的控制並可使用低壓與稀釋的化學先驅物。汽化先驅物可由旁通閥快速切換提供薄膜沉積物良好的控制。
反應腔熱控制壁提供先驅物更有效地使用，並可限制薄膜沉積物於製程腔體壁上生成。自動液體流量控制板可自動調整先驅物的使用量而使之最佳化。無死角的容器設計提供化學品更快速地更換與填充。
詳細說明
規格表格：
|
Maximum substrate diameter |
4-inch |
|
Process chamber |
Stainless steel with thermally controlled walls Rotating substrate holder |
|
Heating |
Resistor heating up to 850°C |
|
Temperature control |
Thermocouple temperature control Digital PID temperature controllers |
|
Vacuum, gas and liquid |
Up to 8 process gas lines with mass flow controllers Up to 4 vaporizer units selected function of liquid precursors Additional ALD kit for water Automated liquid panel for easy precursor handling Vacuum valve, vacuum gauge and purge gas line By-pass vacuum valve Pressure control with throttle valve Optional vacuum rotary pump |
|
Control |
Full PC control |
|
Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 12 kW Water: 2 to 6 bars, pressure drop 1 bar, 4 l/mn Compressed air: 6 bars (valve actuation) Process gas fittings: Swagelok ¼ (VCR ¼ optional) |
|
Dimensions and weight |
Width: 1100 mm Depth: 1450 mm Height: 2000 mm Weight: 800 kg |
- Implant annealing
- Contact annealing (III-V and SiC)
- Rapid Thermal Oxidation (RTO)
- Rapid Thermal Nitridation (RTN)
- Selenization (CIGS solar cells)
- Silicon carbonization
- Sol-gel densification and crystallization
- Diffusion from spin-on dopants
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- hBN, MoS2, WS2, MoSe2, WSe2, Graphene
- SiC implant annealing
- CVD of graphene
- Graphene by high temperature SiC sublimation