SprayCVD-050
SprayCVD-050
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特性說明：
ANNEALSYS SprayCVD-050為2"氣溶膠CVD反應器，特別適用於研發單位
- 此系統可適用於最大2”x2”大小的基板
- 紅外線燈管加熱系統提供製程腔內反應同時的快速升溫製程
- 可搭配Kemstream Atokit 以進行前驅物的霧化
- 具抽真空及氣體混合功能
- 完全電腦化控制以方便使用及資料存取
- 軟體與Windows系統相容
詳細說明
規格表格：
| Applications | Spray-CVD, RTA, RTO, In-situ annealing capability |
| Substrate size | up to 2-inch diameter |
| Temperature max. | 1200°C |
| Temperature ramp rate | 200°C/s on 2-inch silicon wafer |
| Temperature control | thermocouple (optional pyrometer) , fast PID |
| Vacuum capability | 10-3 Torr |
| Gas lines | up to 3 gas lines with MFC and one purge line with needle valve |
| Loading | manual, optional interface for glove-box |
|
Maximum substrate size |
2-inch x 2-inch |
|
Process chamber |
Quartz tube with stainless steel flanges |
|
Heating |
Halogen lamps Optional top or/and bottom source heating |
|
Temperature control |
Thermocouple temperature control Fast digital PID temperature controller |
|
Vacuum, gas and liquid |
Purge gas line with needle valve Up to 3 process gas lines with mass flow controllers Kemstream Atokit for precursor atomization Vacuum valve and vacuum gauge Optional vacuum rotary pump Optional pressure control with throttle valve |
|
Control |
Full PC control |
|
Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 15 kW Water: 2 to 6 bars, pressure drop 1 bar, 8 l/mn Compressed air: 6 bars (valve actuation, low consumption) Process gas fittings: Swagelok ¼ |
|
Dimensions and weight |
Width: 700 mm Depth: 700 mm Height: 700 mm Weight: 90 kg |
- Implant annealing
- Contact annealing (III-V and SiC)
- Rapid Thermal Oxidation (RTO)
- Rapid Thermal Nitridation (RTN)
- Selenization (CIGS solar cells)
- Silicon carbonization
- Sol-gel densification and crystallization
- Diffusion from spin-on dopants
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- hBN, MoS2, WS2, MoSe2, WSe2, Graphene
- SiC implant annealing
- CVD of graphene
- Graphene by high temperature SiC sublimation