LC Series
LC 100/102
LC Series
-
- LC100系列為應用於LPCVD的4"精簡管式爐管，主要用於研發及小量生產，可最大裝載至每批量50片晶圓
- 製程腔為不銹鋼法蘭之石英管，石英晶舟由入口的二根石英棒所支撐，搭配高品質、低熱容量的加熱元件，提供快速的熱反應
- 高品質的數位溫度控制器可分別控制每個加熱區，隨溫度變化，該控制器可利用其自動調控(Auto-tuning)功能，持續隨製程變化而進行參數調整，提供高精密度及高再現性的加熱製程
- 此系統搭載一排氣管路，並可接收最高達12管的流量控制製程氣體
- 包含單一腔體(LC100)及雙腔體(LC102)二種機台架構
詳細說明
規格表格：
| Applications | LPCVD, Annealing, Oxidation… |
| Substrate size | up to 4-inch diameter |
| Temperature max. | 1100°C |
| Temperature control | 3 zones, thermocouple, PID control |
| Vacuum capability | 10-3 Torr (option: 10-6 Torr) |
| Gas lines | up to 12 gas lines with MFC, one purge line with needle valve |
| Loading | manual batch (up to 50 wafers per process) |
| Number of process tubes | 1 or 2 |
|
Maximum substrate diameter |
Four inch |
|
Process chamber |
Quartz tube with water-cooled stainless steel flanges |
|
Heating |
Low thermal inertia resistor furnace Maximum temperature 1000°C or 1100°C |
|
Temperature control |
Thermocouple temperature control Digital PID temperature controller – 3 zones |
|
Vacuum and gas |
Purge gas line with needle valve Up to 12 process gas lines with digital mass flow controllers Vacuum valve and vacuum gauge Optional vacuum rotary of dry pump Optional pressure control with throttle valve Option turbo pump |
|
Control |
PC control |
|
Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 15 kW (1 tube) or 30 kW (2 tubes) Water: 2 to 6 bars, pressure drop 1 bar, 8 l/mn Compressed air: 6 bars (valve actuation) Process gas fittings: VCR ¼ |
|
Dimensions and weight |
Width: 700 mm Depth: 1700 mm Height: 1500 mm Weight: 600 kg |
- Implant annealing
- Contact annealing (III-V and SiC)
- Rapid Thermal Oxidation (RTO)
- Rapid Thermal Nitridation (RTN)
- Selenization (CIGS solar cells)
- Silicon carbonization
- Sol-gel densification and crystallization
- Diffusion from spin-on dopants
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- hBN, MoS2, WS2, MoSe2, WSe2, Graphene
- SiC implant annealing
- CVD of graphene
- Graphene by high temperature SiC sublimation