MC200
MC200
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特性說明:
Annealsys MC200為一200mm反應腔壁具熱控制薄膜沉積製程系統,可廣泛應用於DLI-CVD and DLI-ALD製程。
Direct Liquid Injection (DLI)汽化器提供先驅物(precursors)良好的控制並可使用低壓與稀釋的化學先驅物。汽化先驅物可由旁通閥快速切換提供薄膜沉積物良好的控制。
可選用電容電漿以提供具PE-CVD與PE-ALD能力來降低薄膜沉積時溫度。
反應腔熱控制壁提供先驅物更有效地使用,並可限制薄膜沉積物於製程腔體壁上生成。自動液體流量控制板可自動調整先驅物的使用量而使之最佳化。無死角的容器設計提供化學品更快速地更換與填充。
製品概要
規格表格:
Maximum substrate size |
200 mm |
Process chamber |
Stainless steel with thermally controlled walls Rotating substrate holder |
Heating |
Resistor heating up to 850°C |
Temperature control |
Thermocouple temperature control Digital PID temperature controllers |
Vacuum, gas and liquid |
Purge gas line with needle valve Up to 8 process gas lines with mass flow controllers Up to 4 vaporizer units selected function of liquid precursors Additional ALD kits Custom liquid panel depending on the application Vacuum valve and vacuum gauge Optional vacuum rotary of dry pump |
Control |
Full PC control |
Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 20 kW Water: 2 to 6 bars, pressure drop 1 bar, 10 l/mn Compressed air: 6 bars (valve actuation) Process gas fittings: VCR ¼ |
Dimensions and weight |
Width: 1405 mm Depth: 1504 mm Height: 2200 mm Weight: 1000 kg |