MC050
MC050
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特性說明：
Annealsys MC050為一2”多功能薄膜沉積製程系統(DLI-CVD, DLI-ALD, MOCVD, RTP and RTCVD)，提供廣泛地新材料開發研究。
Direct Liquid Injection (DLI)汽化器提供先驅物(precursors)良好的控制並可使用低壓與稀釋的化學先驅物。汽化先驅物可由旁通閥快速切換提供薄膜沉積物良好的控制。
製程腔體燈源加熱系統可在薄膜沉積製程前後直接做退火製程。自動液體流量控制板可自動調整先驅物的使用量而使之最佳化。無死角的容器設計提供化學品更快速地更換與填充。
詳細說明
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Maximum substrate diameter |
2-inch (51 mm) |
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Process chamber |
Quartz tube with water-cooled stainless steel flanges |
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Heating |
Halogen lamps |
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Temperature control |
Thermocouple temperature control |
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Optional pyrometer temperature control Digital PID temperature controllers |
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Vacuum, gas and liquid
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Up to 8 process gas lines with mass flow controllers Up to 6 vaporizer units selected function of liquid precursors Additional ALD kit for water Automated liquid panel for easy precursor handling Vacuum valve, vacuum gauge and purge gas line By-pass vacuum valve Pressure control with throttle valve Optional vacuum rotary pump Optional turbo pump |
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Control |
Full PC control |
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Facilities |
Electricity: 3x400V+N+Gr or 3x220V+Gr, 50/60 Hz Power: 20 kW Water: 2 to 6 bars, pressure drop 1 bar, 8 l/mn Compressed air: 6 bars (valve actuation) Process gas fittings: Swagelok ¼ (Optional VCR) |
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Dimensions and weight |
Width: 955 mm Depth: 1604 mm Height: 1812 mm Weight: 400 kg |
- Implant annealing
- Contact annealing (III-V and SiC)
- Rapid Thermal Oxidation (RTO)
- Rapid Thermal Nitridation (RTN)
- Selenization (CIGS solar cells)
- Silicon carbonization
- Sol-gel densification and crystallization
- Diffusion from spin-on dopants
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- hBN, MoS2, WS2, MoSe2, WSe2, Graphene
- SiC implant annealing
- CVD of graphene
- Graphene by high temperature SiC sublimation